In2te3 ferroelectric

Author: bnom

August undefined, 2024

WebOct 6, 2024 · Generally, the strain resulting from the lattice mismatch may affect the electronic structures of the graphene/In 2 Te 3 heterostructures. For comparison, the … WebIn the present study, 2D In 2 Se 3 flakes down to monolayers are grown by the chemical vapor deposition (CVD) technique on a mica substrate with their structural, optical and ferroelectric properties being studied. The effect of growth parameters (time of growth and Ar flow rate) on the shape and size of the deposited flakes was studied.

Discovery of Robust Ferroelectricity in 2D Defective Semiconductor …

WebApr 6, 2024 · This concept is demonstrated using the example of the bilayer MnBi2Te4 on ferroelectric In2Se3 or In2Te3, where the polarization direction of the 2D ferroelectrics determines the interfacial band ... The In2Se3 films were transferred from mica to TEM grids or other substrates by the poly (methyl methacrylate) (PMMA) method. The PMMA solution was first spin coated onto mica at 3,000 rpm for 60 s and then heated at 100 °C for 5 min. Second, the PMMA was spin coated again to the mica at 1,000 rpm for 60 … See more In a typical CVD process, 6 mg In2O3 (99.99%, Alfa) and three fresh mica sheets were loaded into the quartz boat and placed in downstream zone 2 (T2 = 560–760 °C; heating … See more The InSe crystals were synthesized by heating In2Se3 powder (99.99%, Innochem) at 950 °C for 30 min under H2/N2 mixed gas (30 s.c.c.m.). Then, the InSe powder was obtained by grinding the InSe crystals. In the … See more The In2Se3 films were characterized by OM (Leica, DM2700M and DM1750M), atomic force microscopy (Hitachi 5300E), piezoresponse force microscopy (Asylum Research MFP-3D … See more The metastable β′-In2Se3 can be transformed into a more stable α phase by releasing the strain. We release the strain of β′-In2Se3 films by … See more philosophy\\u0027s r9

[2303.03852] Electrically tunable Gilbert damping in van der Waals ...

WebThe stable ferroelectricity of 2D α In 2 Se 3 is attributed to its unique re-bonding mechanism and the locking between polarizations in the OOP and IP directions, rather than the long-range Coulomb interactions in conventional displacement-type ferroelectrics. WebJul 25, 2024 · Triangular and hexagonal shape of β and γ phase of In 2 Se 3 is presented. • Thickness dependent non-monotonic ferroelectricity in γ-In 2 Se 3 is also demonstrated. • … WebSep 9, 2024 · In addition, an abnormal resistive switching phenomenon in α-In 2 Se 3 is reported when operated in the in-plane ferroelectric switching mode. The findings pave … philosophy\u0027s r8

IP and OOP ferroelectricity in hexagonal γ-In2Se3

WebNov 9, 2024 · The anti-ferroelectric order in β′-In 2 Se 3 and ferroelectric order of β*-In 2 Se 3 are identified, respectively, down to the 2D limit by comprehensive investigations of structural and spectroscopic signatures, including the lattice distortion, the spatial profile of images, the formation of domain structure, and the electronic band ... WebJan 1, 2005 · It was claimed that the resistivity of III–VI semiconductors (Ga 2 Te 3 and In 2 Te 3) decreases abruptly under hydrostatic pressures between 1 and 7 GPa. The … philosophy\\u0027s r7WebDec 8, 2024 · 2D ferroelectrics with robust polar order in the atomic-scale thickness at room temperature are needed to miniaturize ferroelectric devices and tackle challenges imposed by traditional ferroelectrics. These materials usually have polar point group structure regarding as a prerequisite of ferroelectricity. Yet, to introduce polar structure into ... philosophy\u0027s r

"WebOct 30, 2024 · Both ferroelectric domains with opposite polarization and the tested amplitude and phase curve proved that this semiconductor exhibits hysteresis behavior during polarization. In the α -In 2 Se 3 /WSe 2 vertical heterostructure device, the switchable diode effect and nonvolatile memory phenomenon showed a high on/off ratio and a small ... " - In2te3 ferroelectric

In2te3 ferroelectric

Controllable Schottky barriers by ferroelectric switching in …

WebJan 1, 2005 · In the present paper, measurements of the electrical conductivity, the Hall coefficient and the dielectric constant in Ga 2 Te 3 was reported. Our main conclusions were: 1. Ga 2 Te 3 crystal is a promising n-type semiconductor. 2. The energy gap for that compound is 1.21 eV, while the activation energy of donors is 0.11 eV. 3. WebHere, the ferroelectric semiconducting nature of alpha-In 2 Se 3 is utilized to design vdWHs based on two-dimensional transition metal dichalcogenides (TMDs)/alpha-In 2 Se 3 , where TMDs are used...

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WebWhen the out-of-plane ferroelectric polarization field is pointing from In 2 Se 3 towards MoS 2, the energy band of the heterostructure is type-II band alignment with a band gap of 0.8 eV, which is beneficial for carrier separation. With reversal of the ferroelectric polarization, the band alignment switches from type-II to type-I with a band ... WebJul 6, 2024 · Indium selenide (α-In 2 Se 3) is a III 2 –VI 3 binary chalcogenide material with a bandgap in the range of 1.39–1.45 eV [].The excellent electrical and optical properties of α-In 2 Se 3 render it a good candidate for photodetection applications [2,3,4,5].Moreover, α-In 2 Se 3 samples, including atom-thick α-In 2 Se 3 layers, exhibit ferroelectric properties at …

WebJun 1, 2024 · Room temperature ferroelectric thin films are the key element of high-density nonvolatile memories in modern electronics. However, with the further miniaturization of the electronic devices beyond the Moore’s law, conventional ferroelectrics suffer great challenge arising from the critical thickness effect, where the ferroelectricity is unstable if the film … WebOct 21, 2024 · Here, hexagonally stacking α-In 2 Se 3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) …

WebOct 6, 2024 · It is revealed that the electronic structures of graphene and In 2 Te 3 monolayer are well preserved upon contact. The transition between the n-type Ohmic and p-type Schottky contacts can be realized for the graphene/In 2 Te 3 heterostructures by switching the polarity of In 2 Te 3. WebHere we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered α-In 2 Se 3 nanoflakes. The noncentrosymmetric …

WebBy alloying only In2Te3 with SnTe, a ZT value of ∼0.9 at 923 K was achieved. ZT can be further increased to ∼1.1 at 923 K through adjusting the charge carriers by iodine doping at Te sites.", author = "Gangjian Tan and Zeier, {Wolfgang G.} and Fengyuan Shi and Pengli Wang and Snyder, {G. Jeffery} and Dravid, {Vinayak P.} and Kanatzidis ...

WebAbstract. van der Waals layered α-In 2 Se 3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an … philosophy\u0027s r7WebDec 31, 2011 · Abstract and Figures The objective of this research was simulated the electronic structure of In2Te3 thermoelectric material by using discrete variational-Xα (DV-Xα) cluster models method based... t-shirt sayings for menWebJan 6, 2024 · It is revealed that the electronic structures of graphene and In 2 Te 3 monolayer are well preserved upon contact. The transition between the n-type Ohmic and p-type Schottky contacts can be... t-shirt sayings and quotes philosophy\\u0027s rcWebFeb 18, 2024 · By using first-principles calculations, we predict that hole-doping can induce robust ferromagnetism in 2D ferroelectric {\alpha}-In2Se3 due to its unique flat band … philosophy\u0027s r6WebAug 1, 2024 · The reversible polarization of ferroelectric semiconductor In 2 Se 3 can be used to realize the tunable photoelectric properties of the heterostructures. In this work, we construct the two-dimensional (2D) Janus WSSe/In 2 Se 3 van der Waals heterostructures (vdWHs), where Janus WSSe monolayer has an intrinsic out-of-plane dipole moment. First … philosophy\\u0027s raWebFeb 9, 2024 · α-In 2 Se 3 is the most common phase without the inversion symmetry, which affords it with extraordinary piezoelectric and ferroelectric properties [25,26,27]. In … t shirt sayings for 50th birthday